TEM Characterization of Epitaxial MnSi Films Grown on (111) Si Substrates
نویسندگان
چکیده
منابع مشابه
Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition
High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is...
متن کاملSmoothening of (001) and (111) Cu films epitaxially grown on Si substrates
We report an in-situ study of the MBE growth of Cu films on hydrogen-terminated Si (001) and (7x7) reconstructed Si(111) substrates. Using correlated RHEED and STM data, we find a dramatic smoothing of epitaxial Cu(001) surfaces by annealing the asgrown films in the 120-160C temperature range and somewhat less so for the Cu (111) films. Our measurements reveal a lower activation energy (0.40 + ...
متن کاملGaN nanorods grown on Si (111) substrates and exciton localization
We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduc...
متن کاملCharacterization of Al2O3 Films grown by Electron Beam Evaporator on Si Substrates
We report the characterization of aluminum oxide (Al2O3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge...
متن کاملVertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y₂O₃-buffered Si (111).
Two different types of lasing modes, vertical Fabry-Perot cavity and random lasing, were observed in ZnO epi-films of different thicknesses grown on Si (111) substrates. Under optical excitation at room temperature by a frequency tripled Nd:YVO₄ laser with wavelength of 355 nm, the lasing thresholds are low due to high crystalline quality of the ZnO epitaxial films, which act as microresonators...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2010
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927610057582